| |
2SD2131_06
| Silicon NPN Triple Diffused Type (darlington) |
2SD2133
| V<SUB>CEO</SUB>(V) = 50 ;; I<SUB>C</SUB>(A) = 1 ;; HFE(min) = 85 ;; HFE(max) = 340 ;; Package = MT-3-A1 |
2SD2134
| V<SUB>CEO</SUB>(V) = 150 ;; I<SUB>C</SUB>(A) = 1 ;; HFE(min) = 90 ;; Package = MT-3-A1 |
2SD2136
| V<SUB>CEO</SUB>(V) = 60 ;; I<SUB>C</SUB>(A) = 3 ;; HFE(min) = 40 ;; HFE(max) = 250 ;; Package = MT-3-A1 |
2SD2137
| Silicon NPN Triple Diffusion Planar Type ( For Power Amplification ) |
2SD2137A
| V<SUB>CEO</SUB>(V) = 80 ;; I<SUB>C</SUB>(A) = 3 ;; HFE(min) = 70 ;; HFE(max) = 320 ;; Package = MT-4-A1 |
2SD2138
| V<SUB>CEO</SUB>(V) = 60 ;; I<SUB>C</SUB>(A) = 2 ;; HFE(min) = 1000 ;; HFE(max) = ;; Package = MT-4-A1 |
2SD2138A
| V<SUB>CEO</SUB>(V) = 80 ;; I<SUB>C</SUB>(A) = 2 ;; HFE(min) = 1000 ;; HFE(max) = ;; Package = MT-4-A1 |
2SD2139
| V<SUB>CEO</SUB>(V) = 60 ;; I<SUB>C</SUB>(A) = 3 ;; HFE(min) = 500 ;; HFE(max) = 2500 ;; Package = MT-4-A1 |
2SD2140
| Silicon NPN Power Transistor |
2SD2141
| Built-in Avalanche Diode For Surge Absorbing Darlington |
2SD2141
| |
2SD2142
| NPN Plastic Plastic-encapsulate Transistor |
2SD2142K
2SD2143
2SD2144S
| |
2SD2144SU
2SD2144SV
2SD2144SW
| High-current Gain Mediumpower Transistor (20v, 0.5a) |
2SD2145
| 2sd2145 |
2SD2146
| 1.2W Package Power Taped Transistor Designed FOR USE WITH AN Automatic Placement Mechine |
2SD2148
| Silicon NPN Power Transistors |
2SD2150
| |
2SD2150-SOT-89
| Transistor NPN) |
2SD2151
| V<SUB>CEO</SUB>(V) = 80 ;; I<SUB>C</SUB>(A) = 10 ;; HFE(min) = 45 ;; HFE(max) = ;; Package = TO-220F-A1 |
2SD2153
| |
2SD2155
| Silicon NPN Transistor For Power Amplifier Applications |
2SD2156
2SD2156A
2SD2156AO
2SD2156AP
2SD2156AQ
2SD2156O
2SD2156P
2SD2156Q
| Silicon NPN Triple-diffused Planar TYPE |
2SD2159
| 1.2W Package Power Taped Transistor Designed FOR USE WITH AN Automatic Placement Mechine |
2SD2161
2SD2162
| NPN Silicon Epitaxial Transistor FOR Low-frequency Power Amplifiers AND Low-speed Switching |
2SD2163
| NPN Silicon Epitaxial Transistor (darlington Connection) FOR Low-frequency Power Amplifiers AND Low-speed High-current Switching |
2SD2164
| NPN Silicon Epitaxial Transistor FOR Low-frequency Power Amplifiers AND Low-speed Switching |
2SD2165
| NPN Silicon Epitaxial Transistor (darlington Connection) FOR Low-frequency Power Amplifiers AND Low-speed Switching |
2SD2166
| NPN Silicon Low Vce(sat) Transistor |
2SD2166Q
2SD2166R
| Low Vce(sat) Transistor(strobe Flash) |
2SD2167
| |
2SD217
| NPN Silicon Epitaxial MESA Transistor |
2SD2170
| |
2SD2171S
| Medium Power Transistor (25v, 1.2a) |
2SD2176
| General-purpose Driver (built-in C-b ZD), Package : PCP |
2SD2176
| NPN Epitaxial Planar Silicon Transistor, Motor Driver Application |
2SD2177
| V<SUB>CEO</SUB>(V) = 50 ;; I<SUB>C</SUB>(A) = 2 ;; HFE(min) = 120 ;; HFE(max) = 340 ;; Package = MT-2-A1 |
2SD2177A
| V<SUB>CEO</SUB>(V) = 60 ;; I<SUB>C</SUB>(A) = 2 ;; HFE(min) = 120 ;; HFE(max) = 340 ;; Package = MT-2-A1 |
2SD2178
| V<SUB>CEO</SUB>(V) = 50 ;; I<SUB>C</SUB>(A) = 2 ;; HFE(min) = 120 ;; HFE(max) = 340 ;; Package = MT-3-A1 |
2SD2179
| V<SUB>CEO</SUB>(V) = 50 ;; I<SUB>C</SUB>(A) = 5 ;; HFE(min) = 120 ;; HFE(max) = 340 ;; Package = MT-2-A1 |
2SD218
| NPN Silicon Epitaxial MESA Transistor |
2SD2180
| 2sd2180 |
2SD2182
| 1.2W Package Power Taped Transistor Designed FOR USE WITH AN Automatic Placement Mechine |
2SD2184
| V<SUB>CEO</SUB>(V) = 150 ;; I<SUB>C</SUB>(A) = 1 ;; HFE(min) = 120 ;; HFE(max) = 340 ;; Package = MT-2-A1 |
2SD2185
| V<SUB>CEO</SUB>(V) = 50 ;; I<SUB>C</SUB>(A) = 3 ;; HFE(min) = 120 ;; HFE(max) = 340 ;; Package = MiniP3-F1 |
2SD219
| NPN Transistor |
2SD2195
2SD2196
| |
2SD2198
| High-current Switch, Package : SMP |
2SD2198
| NPN Epitaxial Planar Silicon Transistor, 50V/5A Switching Application |
2SD2199
| High-current Switch, Package : SMP |
2SD2199
| NPN Epitaxial Planar Silicon Transistor, 50V/7A Switching Application |
2SD220
| NPN Transistor |
2SD2200
| High-current Switch, Package : SMP |
2SD2200
| |
2SD2201
| High-current Switch, Package : SMP |
2SD2201
| |
2SD2202
| High-current Switch, Package : TO220ML |
2SD2202
| |
2SD2203
| High-current Switch, Package : TO220ML |
2SD2203
| |
2SD2204
| NPN Triple Diffused Type ( High Power Swithcing, Hammer Drive, Pulse Motor Drive Applications ) |
2SD2204_06
| Silicon NPN Triple Diffused Type |
2SD2206
| NPN Epitaxial Type ( Micro Motor Drive, Hammer Drive, Switching, Power Amplifier Applications ) |
2SD2206_06
| Silicon NPN Epitaxial Type (darlington Power Transistor) |
2SD221
| NPN Transistor |
2SD2210
| V<SUB>CEO</SUB>(V) = 20 ;; I<SUB>C</SUB>(A) = 0.5 ;; HFE(min) = 200 ;; HFE(max) = 800 ;; Package = MiniP3-F1 |
2SD2211
2SD2212
2SD2213
| |
2SD2213TZ
| Silicon NPN Epitaxial, Darlington |
2SD2215
2SD2215A
| Silicon NPN Triple Diffusion Planar Type ( Silicon NPN Triple Diffusion Planar Type ) |
2SD2216
| V<SUB>CEO</SUB>(V) = 50 ;; I<SUB>C</SUB>(A) = 0.1 ;; HFE(min) = 160 ;; HFE(max) = 460 ;; Package = SSMini3-G1 |
2SD2216J
| V<SUB>CEO</SUB>(V) = 50 ;; I<SUB>C</SUB>(A) = 0.1 ;; HFE(min) = 180 ;; HFE(max) = 390 ;; Package = SSMini3-F1 |
2SD2216L
| V<SUB>CEO</SUB>(V) = 50 ;; I<SUB>C</SUB>(A) = 0.1 ;; HFE(min) = 180 ;; HFE(max) = 390 ;; Package = ML4-N1 |
2SD2217
| NPN Silicon Epitaxial Transistor (darlington Connection) FOR Low-frequency Power Amplifiers AND Low-speed Switching |
2SD2218
| High-current Switch, Package : TO220ML |
2SD2218
| |
2SD2219
| High-current Switch, Package : TO220ML |
2SD2219
| |
2SD2220
| V<SUB>CEO</SUB>(V) = 80 ;; I<SUB>C</SUB>(A) = 1 ;; HFE(min) = 4000 ;; HFE(max) = 20000 ;; Package = MT-3-A1 |
2SD2222
| V<SUB>CEO</SUB>(V) = 160 ;; I<SUB>C</SUB>(A) = 8 ;; HFE(min) = 10000 ;; HFE(max) = ;; Package = TOP-3L-A1 |
2SD2223
| General-purpose Driver, Package : TO220MF |
2SD2223
| |
2SD2224
| General-purpose Driver, Package : TO220MF |
