Semiconductors Parts begin by G2, Total parts = 10
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Part number: G2119
Photodiode Type: PN
Photodiode Spectral Response: UV Visible
Spectral Response Range (nm): 190 to 680
Peak Sensitivity Wavelength (nm): 610 
Active Area Diameter or Length (mm): 10.10 
Active Area Height (mm): 10.10 
Sensitivity (A/W): 0.1800 
Rise Time (ns): 55000 
Operating Temperature (C): -10.00 to 60.00
Dark Current (nA): 0.1000 
Noise Equivalent Power (W/Hz½): 2.40E-14 
Photodiode Material: GaAsP
Photodiode Package: Ceramic
Notes: GaAsP photodiode, Schottky type, quartz glass window


Part number: G220
VDRM(V): +/- 180
Breakover Voltage (60 Hz Sine Wave) (V): 205
On-State RMS Current Conduction Angle of 360° (A): 1.0
Peak Surge (Non-Repetitive) On-State Current One-cycle @60Hz (A): 20
Repetitive Peak Off-State Current @60Hz, V =VDRM (µA): 10
Dynamic Holding Current R =0.1 KW , 60Hz (mA): 100
Breakover Current 60Hz Sine Wave (µA): 200


Part number: G2237
Description: Dual Channel SHDSL Chip Set


Part number: G240
VDRM(V): +/- 180
Breakover Voltage (60 Hz Sine Wave) (V): 220
On-State RMS Current Conduction Angle of 360° (A): 1.0
Peak Surge (Non-Repetitive) On-State Current One-cycle @60Hz (A): 20
Repetitive Peak Off-State Current @60Hz, V =VDRM (µA): 10
Dynamic Holding Current R =0.1 KW , 60Hz (mA): 100
Breakover Current 60Hz Sine Wave (µA): 200


Part number: G260
VDRM(V): +/- 180
Breakover Voltage (60 Hz Sine Wave) (V): 240
On-State RMS Current Conduction Angle of 360° (A): 1.0
Peak Surge (Non-Repetitive) On-State Current One-cycle @60Hz (A): 20
Repetitive Peak Off-State Current @60Hz, V =VDRM (µA): 10
Dynamic Holding Current R =0.1 KW , 60Hz (mA): 100
Breakover Current 60Hz Sine Wave (µA): 200


Part number: G270
VDRM(V): +/- 180
Breakover Voltage (60 Hz Sine Wave) (V): 250
On-State RMS Current Conduction Angle of 360° (A): 1.0
Peak Surge (Non-Repetitive) On-State Current One-cycle @60Hz (A): 20
Repetitive Peak Off-State Current @60Hz, V =VDRM (µA): 10
Dynamic Holding Current R =0.1 KW , 60Hz (mA): 100
Breakover Current 60Hz Sine Wave (µA): 200


Part number: G2711-01
Photodiode Type: PN
Photodiode Spectral Response: Visible
Spectral Response Range (nm): 300 to 680
Peak Sensitivity Wavelength (nm): 640 
Active Area Diameter or Length (mm): 1.30 
Active Area Height (mm): 1.30 
Sensitivity (A/W): 0.3000 
Rise Time (ns): 1000 
Operating Temperature (C): -30.00 to 80.00
Dark Current (nA): 0.0010 
Noise Equivalent Power (W/Hz½): 1.50E-15 
Photodiode Material: GaAsP
Photodiode Package: Plastic
Notes: GaAsP photodiode, diffusion type, resin coated window


Part number: G2A thru G2M
IF(AV) (A): 2
Package: DO-204AP


Part number: G2SB20 thru G2SB80
IF(AV) (A): 1.5
Package: GBL


Part number: G2SBA20 thru G2SBA80
IF(AV) (A): 1.5
Package: GBL


 
 
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